Title :
Unstable states of BGaN(P, As) / Ga(P, As) materials
Author :
Núñez, Gabriela Rosas ; Albarrán, Salvador Felipe Daz ; Elyukhin, Vyacheslav Alexander ; Peralta, Patricia Rodríguez
Author_Institution :
Escuela Super. de Ing. Mec. y Electr.-IPN, Mexico City, Mexico
Abstract :
The spinodal decomposition ranges of low N-content BxGa1-xNy (P,As)1-y/Ga(P,As) alloys grown on Ga(P,As) (001) substrates, are described. The alloys are represented as strictly regular solutions. In the analysis, we take into account the transformation of the bonds, strain and elastic energies. Spinodal decomposition ranges of BxGa1-xNyP1-y alloys with compositions x = 0.01, 0.013, 0.015 and 0 ≤ y ≤ 0.08 are demonstrated up to 1100°C, and to BxGa1-xNyAs1-y with compositions x = 0.008, 0.01, 0.011, 0.012 and 0 ≤ y ≤ 0.06 are demonstrated up to 1180°C. The estimations show that the decomposition ranges are larger when the transformation of the bonds is not considered.
Keywords :
bonds (chemical); boron compounds; crystal growth from solution; gallium arsenide; gallium compounds; semiconductor growth; spinodal decomposition; (001) substrates; BGaN(PAs)-Ga(PAs); Ga(PAs); bonds; elastic energy; spinodal decomposition; strain energy; temperature 1100 degC to 1180 degC; unstable states; Compounds; Metals; Solids; Strain; Substrates; Temperature distribution; III–V quaternary alloys; Spinodal decomposition range; nitrides;
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location :
Merida City
Print_ISBN :
978-1-4577-1011-7
DOI :
10.1109/ICEEE.2011.6106065