Title :
Highly Stabilized, Ultra-Low Noise FET Oscillator with Dielectric Resonator
Author :
Lan, G. ; Kalokitis, D. ; Mykietyn, E. ; Hoffman, E. ; Sechi, F.
Abstract :
A highly stabilized ultra-low noise GaAs FET oscillator, using a temperature stabilized dielectric resonator in the feedback circuit, has been developed. A key factor for achieving high stability and low noise is a very high loaded Q (8000) . The oscillator operates at 4 GHz with a power output of 11.5 dBm, a frequency temperature coefficient of +- 0.02 ppm/°C, and a SSB N/C ratio of -130 dBc/Hz and -146 dBc/Hz at 10 KHz and 100 KHz off carrier, respectively. The oscillator is varactor tunable over a 1500 KHz bandwidth.
Keywords :
Amplitude modulation; Circuit noise; Circuit stability; Dielectrics; FETs; Feedback circuits; Frequency; Gallium arsenide; Oscillators; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132115
