• DocumentCode
    2690143
  • Title

    RF Nonlinear Device Characterization Yields Improved Modeling Accuracy

  • Author

    Smith, M.A. ; Howard, T.S. ; Anderson, K.J. ; Pavio, A.M.

  • fYear
    1986
  • fDate
    2-4 June 1986
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    A new method for measuring the nonlinear characteristics of microwave GaAs field-effect transistors (FETs) has been developed and evaluated. The technique, which involves RF rather than DC FET measurement, has yielded significant improvement in circuit compression point and harmonic content modeling accuracy.
  • Keywords
    Circuits; Current measurement; Electrical resistance measurement; Gallium arsenide; Microwave FETs; Microwave measurements; Microwave theory and techniques; Pulse amplifiers; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1986 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1986.1132198
  • Filename
    1132198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2690143