DocumentCode
2690640
Title
A 1V supply area effective CMOS Bandgap reference
Author
Sheng Jinggang ; Chen Zhiliang ; Shi Bingxue
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
1
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
619
Abstract
This paper works on implementation of CMOS Bandgap voltage reference circuits in condition of low voltage low power design. The presented Bandgap reference can operate at below 1V supply and generate about 0.5 V reference voltage. Simulation results show that it has a temperature coefficient of 60 μV/°C from -25°C to 125°C. When supply voltage varies from 0.95 to 2.5 V, output voltage is 503 mV±0.5 mV at 25°C. It is implemented with a standard 0.35 μm EEPROM CMOS process.
Keywords
CMOS integrated circuits; EPROM; low-power electronics; operational amplifiers; reference circuits; -25 to 125 degC; 0.35 micron; 0.5 V; 0.95 to 2.5 V; 1 V; CMOS bandgap reference voltage circuits; EEPROM CMOS process; complementary metal oxide semiconductor; electrically erasable PROM process; low voltage low power design; operational amplifiers; parallel read only memory process; temperature coefficient;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277625
Filename
1277625
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