DocumentCode
2690767
Title
Highly Stable 35 GHz GaAs FET Oscillator
Author
Dow, G.S. ; Sensiper, D. ; Schellenberg, J.M.
fYear
1986
fDate
2-4 June 1986
Firstpage
589
Lastpage
591
Abstract
A 35 GHz FET oscillator stabilized with a dielectric resonator has achieved a single sideband noise-to-carrier ratio of -87 dBc/Hz at fm = 25 kHz, external Q /spl cong/ 3000, and frequency stability of 1 ppm/°C. Using this oscillator as the LO, a compact MIC Ka-band receiver was also developed.
Keywords
Coupling circuits; Dielectric substrates; Gallium arsenide; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Millimeter wave circuits; Millimeter wave technology; Power generation; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132254
Filename
1132254
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