Title :
Investigation of charge-trap memories with AlN based band engineered storage layers
Author :
Molas, G. ; Colonna, J.P. ; Kies, R. ; Belhachemi, D. ; Bocquet, M. ; Gely, M. ; Vidal, V. ; Brianceau, P. ; Vandroux, L. ; Ghibaudo, G. ; De Salvo, B.
Author_Institution :
MINATEC, CEA, Grenoble, France
Abstract :
This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si3N4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si3N4 double layer, which shows reduced program/erase voltages, combined with 106 excellent endurance and good retention (ΔVT>5V after 10 years at 125°C).
Keywords :
III-V semiconductors; circuit reliability; semiconductor storage; wide band gap semiconductors; band engineered storage layers; charge-trap memories; electrical properties; reliability; Aluminum oxide; Atherosclerosis; Dielectric materials; Dielectric measurements; Electron traps; Material storage; Photonic band gap; Reliability engineering; Tin; Voltage; AlN; Charge trap memories; MANOS; TANOS; engineered charge trapping layer; reliability;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488309
