DocumentCode
2690910
Title
Reliable 1200 amp 2500 V IGBT modules for traction applications
Author
Stockmeier, T. ; Bayerer, R. ; Herr, E. ; Sinerius, D. ; Thiemann, U.
Author_Institution
ABB Semicond. Inc., El Segundo, CA, USA
fYear
1995
fDate
34814
Firstpage
42430
Lastpage
313
Abstract
In this paper, the authors describe a new approach to high power IGBT modules which can fulfil the reliability demands for traction applications. The FLIP module (fast low inductance package) rated at 1200 A, 2500 V is constructed from small area subassemblies each housing IGBTs and fast recovery diodes. The IGBT and diode chips exhibit a solderable front and backside metallization which allows a very rugged and reliable connection inside the module. The substrates (pre-tested for static and dynamic properties) are soldered on a common heat sink and connected together with a very low inductance terminal configuration which provides a very efficient connection to the power electronic system. The novel module allows further functional integration such as an add-on gate unit and a direct liquid cooled heat sink. The gate unit can be mounted on top of the module placed in an area of low EM noise. The direct liquid cooled heat sink will reduce the thermal resistance of junction to ambient drastically
Keywords
flip-chip devices; heat sinks; insulated gate bipolar transistors; packaging; power bipolar transistors; power convertors; power semiconductor diodes; semiconductor device metallisation; semiconductor device reliability; soldering; traction; 1200 A; 2500 V; FLIP module; IGBT modules; add-on gate unit; backside metallization; fast low inductance package; fast recovery diodes; liquid cooled heat sink; power convertors; power electronics; reliability; solderable front; subassemblies; thermal resistance; traction applications;
fLanguage
English
Publisher
iet
Conference_Titel
IGBT Propulsion Drives, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950530
Filename
477972
Link To Document