• DocumentCode
    2690946
  • Title

    High performance Flash memory for 65 nm embedded automotive application

  • Author

    Piazza, Fausto ; Boccaccio, Christian ; Bruyere, Sylvie ; Cea, Riccardo ; Clark, Bill ; Degors, Nicolas ; Collins, Christopher ; Gandolfo, Anna ; Gilardini, Annalisa ; Gomiero, Enrico ; Mans, Pier Marie ; Mastracchio, Gianfranco ; Pacelli, David ; Planes,

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65 nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the flash cell and the related HV MOS and the results obtained on a 4 Mbit flash array are very promising.
  • Keywords
    CMOS memory circuits; automotive electronics; flash memories; CMOS technology; HV MOS; embedded automotive application; embedded technology; flash array; high performance flash memory; size 65 nm; storage capacity 4 Mbit; Automotive applications; CMOS process; CMOS technology; Dielectric substrates; Electronics industry; Flash memory; Implants; Nonvolatile memory; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2010 IEEE International
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-6719-8
  • Electronic_ISBN
    978-1-4244-7668-8
  • Type

    conf

  • DOI
    10.1109/IMW.2010.5488312
  • Filename
    5488312