Title :
Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process
Author :
Gopalan, Chakravarthy ; Ma, Yi ; Gallo, Tony ; Wang, Janet ; Runnion, Ed ; Saenz, Juan ; Koushan, Foroozan ; Hollmer, Shane
Author_Institution :
Adesto Technol., Sunnyvale, CA, USA
Abstract :
Today´s main stream NVM technologies require operational conditions that are incompatible with modern low voltage logic CMOS designs. This characteristic results in complex integration issues as well as costly process and array concept especially for embedded NVM use models. Conductive bridging memory cell (CBRAM) technology is an attractive emerging memory technology that offers simple integration and scalable operational conditions. These unique features make CBRAM technology an ideal candidate for embedded applications. In this paper, we have shown successful integration of CBRAM into Copper and Aluminum back end logic CMOS processes with minimal number of added masks.
Keywords :
CMOS logic circuits; CMOS memory circuits; random-access storage; CBRAM; NVM technology; aluminum; conductive bridging random access memory; copper; logic CMOS process; Aluminum; CMOS logic circuits; CMOS process; CMOS technology; Copper; Logic design; Low voltage; Nonvolatile memory; Random access memory; Semiconductor device modeling;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488320
