Title :
Simulations of a high power 4H-SiC VJFET and its GaAs counterpart
Author :
shui, Q. ; Gu, Xingfa ; Myles, C.W. ; Mazzola, M.S. ; Gundersen, M.A.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
In this paper, the 2D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET´s based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8 kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.
Keywords :
III-V semiconductors; current density; junction gate field effect transistors; pulsed power technology; wide band gap semiconductors; 2D simulator; 4H-SiC VJFET; 8 kV; GaAs; GaAs counterpart; SiC; VJFET switching characteristics; current density; current rating; pulsed power applications; voltage blocking capability; Computational modeling; Current density; Gallium arsenide; Photonic band gap; Power semiconductor switches; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-7915-2
DOI :
10.1109/PPC.2003.1277674
