DocumentCode
2691640
Title
A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements
Author
LaRue, R. ; Bandy, S. ; Zdasiuk, G.
fYear
1986
fDate
2-4 June 1986
Firstpage
821
Lastpage
824
Abstract
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.
Keywords
Bandwidth; Circuit simulation; Circuit testing; Distributed amplifiers; FETs; Fabrication; Gain; Laboratories; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132317
Filename
1132317
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