Title :
Analysis on switching behaviour of trench and planar IGBTs under soft and hard switching conditions
Author :
Iwamoto, H. ; Kawakami, A. ; Kondo, H. ; Tabata, M. ; Wheeler, N.
Author_Institution :
Power Semicond. Device Div., Mitsubishi Electr. Co., Japan
Abstract :
This paper presents the results of analysis on dynamic operation of 3 kinds of IGBTs under conditions of soft and hard switching topologies. Voltage and current waveforms and power losses, electric field distributions and carriers behaviors inside the chips are studied through simulation and experiment. It is noted that the trench gate IGBT has advantages over the other types for the hard switching application and both the trench and planar gate IGBTs by epitaxial-wafer are suitable for soft switching application
Keywords :
insulated gate bipolar transistors; losses; power convertors; power semiconductor switches; current waveforms; dynamic operation; electric field distributions; epitaxial-wafer; hard switching conditions; planar IGBT; power convertors; power losses; soft switching conditions; switching behaviour analysis; trench IGBT; voltage waveforms;
Conference_Titel :
Power Electronics and Variable Speed Drives, 2000. Eighth International Conference on (IEE Conf. Publ. No. 475)
Conference_Location :
London
Print_ISBN :
0-85296-729-2
DOI :
10.1049/cp:20000253
