Title :
Understanding the impact of metal gate on TANOS performance and retention
Author :
Van den Bosch, G. ; Arreghini, A. ; Breuil, L. ; Cacciato, A. ; Schram, T. ; Suhane, A. ; Zahid, M.B. ; Jurczak, M. ; Van Houdt, J.
Author_Institution :
imec, Leuven, Belgium
Abstract :
In TANOS memory, deeper erase is pursued by implementing a high work function (p-type) metal gate. Our experiments show that the metal gate may also change program and retention in a way that cannot be explained by simple electrostatic considerations. Instead, we suggest that some metal gates may give rise to a change in the properties of the underlying blocking dielectric or the interface with the nitride, leading to the abovementioned observations. Hydrogen appears to be involved in this process.
Keywords :
flash memories; logic gates; NAND; TANOS memory; TANOS performance; blocking dielectric; electrostatic consideration; flash memory; metal gate; Aluminum oxide; Annealing; Channel bank filters; Dielectrics; Electrostatics; Hydrogen; Nonvolatile memory; Pulse measurements; Temperature; Time measurement;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488385
