DocumentCode :
2692268
Title :
Low power 3D-integrated Solid-State Drive (SSD) with adaptive voltage generator
Author :
Takeuchi, Ken
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
4
Abstract :
A 3D-integrated Solid-State Drive (SSD with an adaptive program-voltage generator is introduced. The proposed boost converter is composed of a spiral inductor, a high-voltage MOS circuit, and an adaptive-frequency and duty-cycle (AFD) controller. The 5 × 5 mm2 spiral inductor is implemented in an interposer. The high-voltage MOS circuit is fabricated with a matured NAND flash process. The AFD controller is manufactured with a conventional 0.18 um low-voltage CMOS process. The AFD controller dynamically optimizes clock frequencies and duty cycles at different values, depending on the output voltage. As a result, the power consumption, rising time, and circuit area of the program-voltage generator decreases by 88%, 73%, and 85%, respectively. The total power consumption of the NAND flash memory decreases by 68%.
Keywords :
MOS memory circuits; disc drives; flash memories; power convertors; NAND flash process; adaptive program-voltage generator; adaptive voltage generator; adaptive-frequency controller; boost converter; duty-cycle controller; high-voltage MOS circuit; low power 3D-integrated solid-state drive; low-voltage CMOS process; spiral inductor; CMOS process; Clocks; Energy consumption; Inductors; Manufacturing processes; Power generation; Process control; Solid state circuits; Spirals; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488397
Filename :
5488397
Link To Document :
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