DocumentCode :
2692282
Title :
Phase Change Memory development trends
Author :
Bez, R. ; Bossi, S. ; Gleixner, B. ; Pellizzer, F. ; Pirovano, A. ; Servalli, G. ; Tosi, M.
Author_Institution :
R&D Technol. Dev., Numonyx, Agrate Brianza, Italy
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
4
Abstract :
At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade. As the end of this decade is approaching it can be noted that only one of the proposed technologies is demonstrating the capability to enter the broad NVM market and to be a mainstream memory for the next decade: the Phase Change Memory technology. PCM provides a new set of features interesting for novel applications, combining features of NVM and DRAM and being at the same time a sustaining and a disruptive technology.
Keywords :
DRAM chips; flash memories; phase change memories; DRAM; NVM technology; PCM technology; disruptive technology; flash application; nonvolatile memory; phase change memory; Application software; CMOS technology; Diodes; Material storage; Nonvolatile memory; P-n junctions; Phase change materials; Phase change memory; Random access memory; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488398
Filename :
5488398
Link To Document :
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