Title :
Device scaling for 15 nm node and beyond
Author :
Shahidi, Ghavam G.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In summary, as we move it 15 nm and beyond, it is critical that the device structure fit in ever smaller footprint. It seems that Si devices can fulfill this key requirement: moving from thick body devices to thin body and ultimately to Si nano-wires, in order to enable small gate length devices. This is the good news. Better news could be if we are able to find a device that can do better than Silicon MOSFET.
Keywords :
MOSFET; nanowires; silicon; Si devices; Si nanowires; device scaling; silicon MOSFET; thick body devices; thin body devices; BiCMOS integrated circuits; CMOS technology; Cooling; Costs; Frequency; Moore´s Law; Performance gain; Random access memory; Silicon; Voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354883
