Title :
1.5 μm NOVA BiCMOS for Gb/s system application
Author :
Chiu, Tzu-Yin ; Chin, Gen M. ; Lau, Maureen Y. ; Hanson, Ronald C. ; Morris, Mark D. ; Lee, Kwing F. ; Voshchenkov, Alexander M. ; Swartz, Robert G. ; Archer, Vance D. ; Liu, Mark T Y ; Finegan, Sean N. ; Feuer, Mark D.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
BiCMOS technology which merges optimal CMOS and bipolar device structure is reported. Based on a nonoverlapping super-self-aligned structure (NOVA), the latest 1.5-μm CMOS and ECL (emitter-coupled logic) ring oscillators have minimum delays of 110 ps/stage and 87 ps/stage, respectively. A frequency divider operating up to 4.6 GHz has been fabricated. A multiplexer and demultiplexer function up to 5.1 Gb/s. In addition to double self-alignments, a unique epi/isolation scheme combining lateral autodoping free epi deposition with a new fully recessed oxide process have been developed. This approach significantly simplifies the isolation process and is an important factor in achieving high speed with a conservative 1.5-μm design rule
Keywords :
BIMOS integrated circuits; digital integrated circuits; integrated circuit technology; 1.5 micron; 4.6 GHz; 5.1 Gbit/s; BiCMOS technology; Gb/s system application; NOVA; demultiplexer; digital IC; double self-alignments; epi/isolation scheme; frequency divider; lateral autodoping free epi deposition; multiplexer; nonoverlapping super-self-aligned structure; recessed oxide process; BiCMOS integrated circuits; Boron; Conductivity; Dielectrics; Etching; Implants; MOS devices; Parasitic capacitance; Resists; Silicides;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68589
