Title :
First principal simulation of CoSi2/Si and NiSi2/Si contacts
Author :
Zhao, Pei ; Ouyang, Yijian ; Chauhan, Jyotsna ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The CoSi2/Si and NiSi2/Si interfaces are examined by using the first principles calculation. metal-induced gap states (MIGS) exist at the interface, and the magnitude is large enough to pin the Fermi level. The MIGS decay exponentially with interface distance and penetrate about 6 ¿ into the Si layers. Schottky barrier height (SBH) for electrons can be increased by a B atom at substitutional site of a Si atom located in Si layers near the interface for a p-type doping, but it will be decreased by an N atom doping. The precise control of the dopants near the interface can reduce SBH and realize reduction in contact resistance. The SBH also depends on the crystallographic orientation of the silicide/silicon interface.
Keywords :
Fermi level; Schottky barriers; ab initio calculations; boron; contact resistance; copper alloys; elemental semiconductors; interface states; nickel alloys; nitrogen; semiconductor-metal boundaries; silicon; silicon alloys; CoSi2-Si; Fermi level; NiSi2-Si; Si:B; Si:N; contact resistance; crystallographic orientation; first principal simulation; interface distance; metal-induced gap states; p-type doping; silicide-silicon interface; Atomic layer deposition; Charge carrier processes; Contact resistance; Delay; Doping; Electric resistance; Interface states; Photonic band gap; Silicides; Silicon;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354922
