Low-voltage metal-gate top-contact organic thin-film transistors and complementary inverters with submicron channel length

Since the mobility of organic semiconductors cannot be increased indefinitely , improvements in the dynamic performance of organic thin-film transistors (TFTs) require reductions in the TFT dimensions. Assuming a mobility of 0.1 cm2/Vs and aiming for a cutoff frequency of 10 MHz at 3 V, channel length and gate-to-contact overlap have to be reduced well below 1 ¿m. Although no cost-effective methods to manufacture high-mobility submicron organic TFTs on large-area flexible substrates currently exist, such methods may become available in the near future. To ensure that the carrier density in short-channel TFTs is controlled by the gate, rather than the drain, the gate dielectric thickness must also be reduced, ideally using a low-temperature-processable dielectric and without introducing large gate leakage.