Title :
Gigahertz operation of epitaxial graphene transistors
Author :
Tahy, K. ; Shilling, D. ; Zimmermann, T. ; Xing, H. ; Fay, P. ; Luxmi ; Feenstra, R.M. ; Jena, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
A graphene FET with a 0.5 ¿m long gate an exceptional high power gain cut-off frequency fmax of 16 GHz is demonstrated. These preliminary results are very encouraging and demonstrate the potential of the epitaxially grown graphene devices for high-frequency applications as the quality of graphene on insulating substrates improve over time.
Keywords :
epitaxial growth; graphene; lithography; microwave field effect transistors; silicon compounds; wide band gap semiconductors; Si; SiC; epitaxial graphene transistor gigahertz operation; frequency 16 GHz; graphene FET; high frequency application; insulating substrate; size 0.5 mum; Electron mobility; Etching; FETs; Frequency; Lithography; Plasma applications; Plasma measurements; Silicon carbide; Substrates; Transconductance;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354952
