DocumentCode :
2693675
Title :
High speed devices
fYear :
2009
fDate :
22-24 June 2009
Firstpage :
147
Lastpage :
147
Keywords :
Aluminum gallium nitride; Atomic layer deposition; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; MOSFETs; Narrowband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA, USA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
Type :
conf
DOI :
10.1109/DRC.2009.5354960
Filename :
5354960
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2693675
