DocumentCode
2693725
Title
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE
Author
Wong, Man Hoi ; Pei, Yi ; Brown, David F. ; Keller, Stacia ; Speck, James S. ; Mishra, Umesh K.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
157
Lastpage
158
Abstract
In summary, MBE-grown N-face HEMTs deliver outstanding large signal performance in the C-band, comparable to well-developed Ga-face devices. It was demonstrated that back-barrier engineering could effectively enhance device performance, and hence should be identified as an important design consideration when scaling N-face HEMTs for millimeter-wave operations.
Keywords
gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; C-band; Ga-face devices; GaN; MBE-grown N-face HEMT; back-barrier engineering; high performance MBE-grown N-face microwave GaN HEMT; millimeter-wave operations; signal performance; Electron traps; Gallium nitride; HEMTs; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Plasma applications; Plasma devices; Plasma temperature; Polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354964
Filename
5354964
Link To Document