Sb-based n- and p-channel HFETs for high-speed, low-power applications

Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential, which include large-scale activearray space-based radar, communications, imaging, sensing, and high-data-rate transmission. In this talk, recent advances at our laboratory in the design, material growth, device performance, and oxidation stability of Sb-based nand p-channel HFETs will be presented.