Title :
Solid state power supply modulator system for magnetron
Author :
Vizir, V.A. ; Ivanov, S.N. ; Kovalchuk, B.M. ; Manilov, V.I. ; Shubkin, N.G. ; Chervyakov, V.V. ; Yuriev, V.V. ; Butakov, L.D. ; Tolmacev, V.I.
Author_Institution :
High Current Electron. Inst., Russian Acad. of Sci., Tomsk, Russia
Abstract :
Typical modulators for magnetrons are based usually on the lamp or thyratron switches [E.M. Verechagin, 1972]. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors [R. Richardson et al.]. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6/spl divide/6 /spl mu/s pulse length and frequency up to 2 kHz.
Keywords :
bipolar transistor switches; field effect transistor switches; magnetrons; modulators; pulsed power supplies; 10 kW; 100 A; 3 MW; 50 kV; MOSFET transistor; capacitors; lamp switches; magnetron; power supply modulator system; pulse power; pulse transformer primary winding; secondary winding; solid state switches; thyristor switches; Lamps; MOSFETs; Magnetic modulators; Power supplies; Pulse modulation; Pulse transformers; Pulsed power supplies; Solid state circuits; Switches; Thyratrons;
Conference_Titel :
Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-7915-2
DOI :
10.1109/PPC.2003.1278092
