DocumentCode
2696863
Title
Design and fabrication of CMOS-integrated thermoelectric IR microsensors
Author
Lin, Keng-Shuen ; Chen, Rongshun
Author_Institution
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu
fYear
2008
fDate
11-14 Aug. 2008
Firstpage
106
Lastpage
107
Abstract
This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.
Keywords
CMOS integrated circuits; infrared detectors; integrated optoelectronics; micro-optomechanical devices; microsensors; optical design techniques; optical fabrication; thermoelectric devices; CMOS-integrated thermoelectric IR microsensor fabrication; MEMS design; TSMC CMOS-MEMS processes; bulk-micromachining; infrared sensors; Atmospheric modeling; Circuits; Fabrication; Infrared heating; Infrared sensors; Microsensors; Numerical simulation; Structural beams; Thermal sensors; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on
Conference_Location
Freiburg
Print_ISBN
978-1-4244-1917-3
Electronic_ISBN
978-1-4244-1918-0
Type
conf
DOI
10.1109/OMEMS.2008.4607851
Filename
4607851
Link To Document