Title :
NAND Flash reliability degradation induced by HCI in boosted channel potential
Author :
Park, Milim ; Park, Sukkwang ; Cho, Seokwon ; Lee, Dong-Kyu ; Jeong, YeonJoo ; Hong, Chonga ; Lee, Ho Seok ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Koh, Yohwan
Author_Institution :
Flash Memory Div., Hynix Semicond. Inc., Cheongju, South Korea
Abstract :
In this paper, we present the impact of hot carrier injection (HCI) during programming operation in NAND Flash, and describe how HCI degrades reliability characteristics. In order to understand reliability degradation induced by HCI, we evaluated the reliability characteristics under various stress conditions including the number of disturbance pulses, pulse shapes and temperatures. We have concluded that the programming pulse and boosting bias should be carefully optimized to reduce the impact of HCI.
Keywords :
NAND circuits; flash memories; hot carriers; integrated circuit reliability; HCI; NAND flash reliability degradation; boosted channel potential; boosting bias; hot carrier injection; programming pulse; stress conditions; Boosting; Degradation; Electron traps; Flash memory; Hot carriers; Human computer interaction; Pulse shaping methods; Semiconductor device reliability; Stress; Temperature; Channel potential; Hot carrier; NAND Flash;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488692
