• DocumentCode
    269774
  • Title

    Structural investigation of silicon nanowires with grazing incidence small angle X-ray scattering

  • Author

    Buttard, Denis ; Schülli, Tobias ; Oehler, F. ; Gentile, P.

  • Author_Institution
    INAC/SiNaPS-MINATEC, CEA-Grenoble, Grenoble, France
  • Volume
    8
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    709
  • Lastpage
    712
  • Abstract
    Presented is a structural investigation of silicon nanowires, which is conducted with grazing incidence small angle X-ray scattering. The morphology of the wires is analysed following experimental measurements. Three diameters (50, 100 and 200 nm) are investigated in relation to the aspect ratio of the wires (length 25 μm). Periodic fringes because of the weak distribution of the diameter are observed on the experimental images. The asymptotic behaviour of the scattering signal along the qy direction is also analysed and presented.
  • Keywords
    X-ray scattering; elemental semiconductors; nanowires; silicon; Si; asymptotic behaviour; grazing incidence small angle X-ray scattering; periodic fringes; scattering signal; silicon nanowires; size 100 nm; size 200 nm; size 25 mum; size 50 nm; structural investigation; wire morphology;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2013.0405
  • Filename
    6651479