DocumentCode
269774
Title
Structural investigation of silicon nanowires with grazing incidence small angle X-ray scattering
Author
Buttard, Denis ; Schülli, Tobias ; Oehler, F. ; Gentile, P.
Author_Institution
INAC/SiNaPS-MINATEC, CEA-Grenoble, Grenoble, France
Volume
8
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
709
Lastpage
712
Abstract
Presented is a structural investigation of silicon nanowires, which is conducted with grazing incidence small angle X-ray scattering. The morphology of the wires is analysed following experimental measurements. Three diameters (50, 100 and 200 nm) are investigated in relation to the aspect ratio of the wires (length 25 μm). Periodic fringes because of the weak distribution of the diameter are observed on the experimental images. The asymptotic behaviour of the scattering signal along the qy direction is also analysed and presented.
Keywords
X-ray scattering; elemental semiconductors; nanowires; silicon; Si; asymptotic behaviour; grazing incidence small angle X-ray scattering; periodic fringes; scattering signal; silicon nanowires; size 100 nm; size 200 nm; size 25 mum; size 50 nm; structural investigation; wire morphology;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2013.0405
Filename
6651479
Link To Document