On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions

Author

Shrivastava, Mayank ; Schneider, Jens ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India

fYear

2010

fDate

2-6 May 2010

Firstpage

841

Lastpage

845

Abstract

We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called “week NPN action” and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of ~5X in failure threshold (I_T2) and ~2X in ESD window without degrading its I/O performance.

Keywords

MOSFET; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; 3D device modeling; ESD window; RESURF type DeNMOS device; current instabilities; electrical imbalance; failure mechanism; failure threshold; filamentation; nonSTI type DeNMOS device; pulse-to-pulse instability; shallow trench isolation; week NPN action phenomenon; CMOS technology; Clamps; Electrostatic discharge; Failure analysis; Nanoelectronics; Robustness; Silicides; Space charge; Strips; Voltage; DEMOS; ESD Failure; Filamentation; pulse-to-pulse instability; space charge buildup;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488723

Filename

5488723