DocumentCode
2697797
Title
The hot carrier degradation rate under AC stress
Author
Sasse, Guido T. ; Bisschop, Jaap
Author_Institution
NXP Semicond., Nijmegen, Netherlands
fYear
2010
fDate
2-6 May 2010
Firstpage
830
Lastpage
834
Abstract
In this work the methodology used for predicting hot carrier device degradation under AC stressing conditions is critically re-examined. Having an accurate method is a key prerequisite of developing useful tools for the reliability simulation of any circuit. It will be shown that existing methods are not generally applicable. A new, better applicable method is presented and verified with experimental data.
Keywords
MOSFET; hot carriers; semiconductor device reliability; AC stressing conditions; MOSFET; circuit reliability simulation; hot carrier degradation prediction; Circuit optimization; Circuit simulation; Circuit synthesis; Degradation; Design optimization; Geometry; Hot carriers; Radio frequency; Stress; Temperature dependence; RF reliability; hot carrier degradation; reaction-diffusion; reliability simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488725
Filename
5488725
Link To Document