DocumentCode :
2698316
Title :
An extensive and improved circuit simulation methodology for NBTI recovery
Author :
Kufluoglu, Haldun ; Reddy, V. ; Marshall, A. ; Krick, J. ; Ragheb, T. ; Cirba, C. ; Krishnan, A. ; Chancellor, C.
Author_Institution :
TDI, Texas Instrum., Dallas, TX, USA
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
670
Lastpage :
675
Abstract :
A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools. The method provides significantly enhanced accuracy in simulations when compared to circuit data, yet retains practicality and flexibility.
Keywords :
MOSFET; circuit simulation; delays; semiconductor device reliability; NBTI degradation recovery; PMOS transistor; delay correction; improved circuit simulation methodology; model extraction tools; model verification tools; transistor characterization data; Aging; Circuit simulation; Data mining; Degradation; Delay; Niobium compounds; Pollution measurement; Semiconductor device modeling; Stress measurement; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488753
Filename :
5488753
Link To Document :
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