Title :
Development of a planarized Al-Si contact filling technology
Author :
Ono, Hisako ; Ushiku, Yukihiro ; Yoda, Takashi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A sputter deposition method for Al-Si thin films onto a TiN/Ti coated substrate at a raised temperature has been developed, and their properties have been studied. The films were deposited by a conventional DC magnetron sputtering apparatus without any substrate bias voltage. When the temperature of the substrate was kept at a temperature between 500°C and 550°C, the contact holes were fully filled with Al-Si and the cross-sectional view including SiO2 planarization was very smooth. In this case, no degradations in both the contact resistances and the leakage currents across the junctions were observed. This technology has been proven to be suitable for submicron multilevel interconnections
Keywords :
CMOS integrated circuits; aluminium alloys; contact resistance; integrated circuit technology; leakage currents; metallisation; silicon alloys; sputter deposition; sputtered coatings; surface structure; 500 to 550 degC; AlSi-TiN-Ti; CMOS; DC magnetron sputtering; SiO2 planarization; TiN-Ti coated substrate; contact holes; contact resistances; leakage currents; planarized contact filling technology; sputter deposition method; submicron multilevel interconnections; substrate temperature; surface morphology; Aluminum; Filling; Grain boundaries; Integrated circuit interconnections; Leakage current; Sputtering; Stress; Substrates; Surface morphology; Temperature;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127847
