DocumentCode :
2698497
Title :
Temperature dependent electrical characteristics of silicide/silicon junctions
Author :
Horváth, Zs J. ; Donoval, D. ; Petö, G. ; Molnár, G. ; Van Tuyen, Vo
Author_Institution :
Hungarian Academy of Sciences
fYear :
2000
fDate :
2000
Firstpage :
39
Lastpage :
42
Keywords :
Annealing; Conductivity; Electric variables; Schottky diodes; Silicides; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; Thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889448
Filename :
889448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2698497
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