Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence

Author

Srnánek, R. ; Vincze, A. ; McPhai, D. ; Littlewood, S. ; Kromka, A. ; JánoS, C.

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2000

fDate

2000

Firstpage

307

Lastpage

310

Abstract

GaAs structures were studied by micro-Raman spectroscopy on chemically bevelled samples. We determined the thickness of the layers, quality of the interfaces the presence of impurities (mainly carbon) in the layers, which cause compensation of free carriers. The results were compared with Hall, photoluminescence and SIMS measurements. From the room temperature photoluminescence measurements we were able to identify the peak position and the band gap of the layers. The low temperature PL shows the incorporated impurities. Our results shows a high level of C and O impurities incorporated to the lattice, which we need to avoid for the development of optoelectronic devices

Keywords

III-V semiconductors; Raman spectra; energy gap; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; GaAs; GaAs based layers; Hall effect; Raman spectroscopy; SIMS measurements; band gap; chemically bevelled samples; free carriers compensation; impurities; optical properties; peak position; photoluminescence; Chemicals; Gallium arsenide; Impurities; Lattices; Optoelectronic devices; Photoluminescence; Photonic band gap; Position measurement; Spectroscopy; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889507

Filename

889507