Title :
Modeling the subthreshold region of OTFTs
Author :
Cerdeira, A. ; Estrada, M. ; Iñiguez, B. ; Soto, S.
Author_Institution :
Dept. de Ing. Electr., CINVESTAV, Mexico City, Mexico
Abstract :
This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement between measured and modeled characteristics is shown in two OTFTs, one of tip pentacene and another of F8T2.
Keywords :
organic field effect transistors; semiconductor device models; thin film transistors; OTFT; subthreshold region; Logic gates; Organic thin film transistors; Pentacene; Solid modeling; Temperature dependence; Voltage measurement; TFT; TFT modeling; organic TFT; polymeric TFT; subthreshold region modeling;
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location :
Merida City
Print_ISBN :
978-1-4577-1011-7
DOI :
10.1109/ICEEE.2011.6106681
