A new self-aligned contact technology for III-V MOSFETs

Author

Guo, Huaxin ; Zhang, Xingui ; Chin, Hock-Chun ; Gong, Xiao ; Koh, Shao-Ming ; Zhan, Chunlei ; Luo, Guang-Li ; Chang, Chun-Yen ; Lin, Hau-Yu ; Chien, Chao-Hsin ; Han, Zong-You ; Huang, Shih-Chiang ; Cheng, Chao-Ching ; Ko, Chih-Hsin ; Wann, Clement H. ; Ye

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2010

fDate

26-28 April 2010

Firstpage

152

Lastpage

153

Abstract

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n⁺ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

Keywords

Ge-Si alloys; III-V semiconductors; MOSFET; gallium arsenide; ohmic contacts; semiconductor epitaxial layers; surface treatment; GaAs; III-V MOSFET; SiGe; epitaxy process; gallium arsenide source-drain regions; in-situ surface treatment; self-aligned contact technology; self-aligned nickel germanosilicide ohmic contact; thin continuous germanium-silicon layer; Annealing; Contact resistance; Epitaxial growth; Gallium arsenide; Germanium silicon alloys; III-V semiconductor materials; MOSFETs; Metallization; Ohmic contacts; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488907

Filename

5488907