• DocumentCode
    2700904
  • Title

    ThruChip Interface for 3D system integration

  • Author

    Kuroda, Tadahiro

  • Author_Institution
    Keio Univ., Japan
  • fYear
    2010
  • fDate
    26-28 April 2010
  • Firstpage
    108
  • Lastpage
    108
  • Abstract
    ThruChip Interface (TCI) employing inductive coupling bares comparison with Through Silicon Via (TSV) in terms of data rate (11Gb/s/ch), reliability (BER<;10-14), and energy dissipation (0.14pJ/b). It is less expensive than TSV by 20c/chip, though, since it is implemented by digital circuits in a standard CMOS. ESD protection devices can be eliminated to further lower delay, power, and area. It exhibits high noise immunity and alignment tolerance. It provides with an AC coupling link to make interface design easy under multiple/variable VDD´s. The cost/performance will further be improved exponentially by thinning chip thickness. Applications include Solid-State Drive (SSD) by stacking NAND Flash memories, a high-speed low-power DRAM interface, bus probing through package for debugging, and non-contact wafer testing. Wireless power delivery by using inductive coupling will further widen the applications. This talk will cover basics, applications, and future perspectives of the TCI.
  • Keywords
    CMOS digital integrated circuits; DRAM chips; NAND circuits; flash memories; three-dimensional integrated circuits; 3D system integration; BER; CMOS; ESD protection devices; NAND flash memories; TSV; ThruChip interface; energy dissipation; high-speed low-power DRAM interface; noncontact wafer testing; solid-state drive; through silicon via; wireless power delivery; CMOS digital integrated circuits; Coupling circuits; Digital circuits; Electrostatic discharge; Energy dissipation; Integrated circuit reliability; Power system reliability; Protection; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-5063-3
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2010.5488927
  • Filename
    5488927