Title :
Back-gate mirror doping for fully depleted planar SOI transistors with thin buried oxide
Author :
Yan, Ran ; Duane, Russell ; Razavi, Pedram ; Afzalian, Aryan ; Ferain, Isabelle ; Lee, Chi-Woo ; Dehdashti, Nima ; Nguten, B. ; Bourdelle, Konstantin K. ; Colinge, J.P.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). Back-gate engineering is introduced to reduce the series resistance and threshold voltage shifts. We show that short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.
Keywords :
doping; silicon-on-insulator; SOI layer thickness variations; back-gate engineering; back-gate mirror doping; fully depleted planar SOI transistors; ground plane; size 15 nm; thin buried oxide; thin-BOX; Doping; Mirrors; LDD depletion effect; back-gate engineering; fully depleted silicon-oninsulation (FDSOI) MOSFET; thin buried-oxide (BOX);
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488939
