Title :
A compact, high-speed, and low-power design for multi-pillar vertical MOSFET´s, suppressing characteristic influences by process fluctuation
Author :
Sakui, Koji ; Endoh, Tetsuo
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
Abstract :
The DC and AC characteristics of the multi-pillar vertical MOSFET´s have been studied, considering the silicon pillar diameter thinning cases due to the process fluctuation. In order to suppress the pillar thinning influences, the Inter Contacts design has been proposed, which can realize the compact, high-speed, low-power, and stable circuits with the multi-pillar vertical MOSFET´s.
Keywords :
MOSFET; low-power electronics; AC characteristics; DC characteristics; compact high-speed low-power design; intercontact design; multipillar vertical MOSFET; process fluctuation; silicon pillar diameter thinning; Circuit synthesis; Contact resistance; Delay effects; Flash memory cells; Fluctuations; Inverters; MOSFET circuits; Manufacturing processes; Silicon; Voltage;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488961
