DocumentCode
2701489
Title
A compact, high-speed, and low-power design for multi-pillar vertical MOSFET´s, suppressing characteristic influences by process fluctuation
Author
Sakui, Koji ; Endoh, Tetsuo
Author_Institution
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
fYear
2010
fDate
26-28 April 2010
Firstpage
30
Lastpage
31
Abstract
The DC and AC characteristics of the multi-pillar vertical MOSFET´s have been studied, considering the silicon pillar diameter thinning cases due to the process fluctuation. In order to suppress the pillar thinning influences, the Inter Contacts design has been proposed, which can realize the compact, high-speed, low-power, and stable circuits with the multi-pillar vertical MOSFET´s.
Keywords
MOSFET; low-power electronics; AC characteristics; DC characteristics; compact high-speed low-power design; intercontact design; multipillar vertical MOSFET; process fluctuation; silicon pillar diameter thinning; Circuit synthesis; Contact resistance; Delay effects; Flash memory cells; Fluctuations; Inverters; MOSFET circuits; Manufacturing processes; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-5063-3
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2010.5488961
Filename
5488961
Link To Document