Title :
On-chip power supply noise measurement using Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC)
Author :
Stellari, Franco ; Song, Peilin ; Sylvestri, John ; Miles, Darrell ; Forlenza, Orazio ; Forlenza, Donato
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Height, NY, USA
Abstract :
In this paper, a new emission-based method for measuring the amplitude of on-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, which are used as local probe points for the noise. In order to demonstrate the capabilities of this technique, we discuss the results obtained for two early microprocessor chips fabricated in 65 nm and 45 nm Silicon On Insulator (SOI) technologies.
Keywords :
CMOS digital integrated circuits; electric noise measurement; integrated circuit design; integrated circuit noise; leakage currents; microprocessor chips; power supply circuits; silicon-on-insulator; CMOS; amplitude measurement; light emission; microprocessor chips; off-state leakage current; on-chip power supply noise measurement; silicon-on-insulator; size 45 nm; size 65 nm; time resolved emission waveform; Attenuation; Diffraction; Geology; Leakage current; Microwave propagation; Noise measurement; Nonuniform electric fields; Polarization; Power supplies; Propagation losses;
Conference_Titel :
Test Conference, 2009. ITC 2009. International
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-4868-5
Electronic_ISBN :
978-1-4244-4867-8
DOI :
10.1109/TEST.2009.5355543
