• DocumentCode
    270222
  • Title

    Interpreting area of pinched memristor hysteresis loop

  • Author

    Biolek, Dalibor ; Biolek, Zdenek ; Biolková, V.

  • Author_Institution
    Dept. of Electr. Eng./Microelectron., Univ. of Defence, Brno, Czech Republic
  • Volume
    50
  • Issue
    2
  • fYear
    2014
  • fDate
    January 16 2014
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity `content´, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v-i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor.
  • Keywords
    memristors; nonlinear systems; current-controlled ideal memristor; memristor memory; nonlinear systems; pinched memristor hysteresis loop; sinusoidal current; voltage-controlled memristor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.3108
  • Filename
    6729317