DocumentCode
270222
Title
Interpreting area of pinched memristor hysteresis loop
Author
Biolek, Dalibor ; Biolek, Zdenek ; BiolkovaÌ, V.
Author_Institution
Dept. of Electr. Eng./Microelectron., Univ. of Defence, Brno, Czech Republic
Volume
50
Issue
2
fYear
2014
fDate
January 16 2014
Firstpage
74
Lastpage
75
Abstract
It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity `content´, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v-i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor.
Keywords
memristors; nonlinear systems; current-controlled ideal memristor; memristor memory; nonlinear systems; pinched memristor hysteresis loop; sinusoidal current; voltage-controlled memristor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3108
Filename
6729317
Link To Document