Title :
Low cost electroless copper metallization of BCB for high-density wiring systems
Author :
Töpper, M. ; Stolle, Th ; Reichl, H.
Author_Institution :
Fraunhofer IZM Berlin, Germany
Abstract :
A fully additive and selective metallization process for structured Cu metallization of BCB was evaluated. BCB was used as the polymeric dielectric due to its excellent electrical and mechanical properties. BCB surface pretreatment by RIE is necessary as a first step to achieve sufficient adhesion of electrolessly deposited Cu on BCB. In a second step, the BCB surface is coated by a precursor layer consisting of palladium acetate and a photoactivator. Precursor layer structuring is by standard i-line lithography followed by wet development with an organic solvent that dissolves unexposed precursor layer areas (negative working photolithography). The remaining pattern consists of Pd2+ in an organic matrix which is not yet catalytically active for electroless plating. An alkaline solution of KBH4 in water activates the Pd2+ by reducing it to Pd0. Pd0 is highly active for electroless Cu deposition. The metallization process uses commercial electroless Cu baths. The electrical resistance of the electrolessly metallized vias is comparable to sputter metallization. The possibility of thin film multilayer metallization was evaluated by via metallization. The reliability of the deposited Cu was checked by air-to-air thermal cycling (-55°C/+125°C). The application of this process could be in the area of high density substrates such as the one used for MCM-D/L
Keywords :
adhesion; circuit reliability; copper; electroless deposition; integrated circuit interconnections; integrated circuit packaging; metallisation; multichip modules; printed circuit manufacture; printed circuit testing; reduction (chemical); sputter etching; ultraviolet lithography; -55 to 125 C; BCB; BCB polymeric dielectric; BCB surface precursor layer coating; BCB surface pretreatment; Cu; KBH4; MCM-D; MCM-L; Pd; Pd2+ surface activation; RIE; additive selective metallization process; adhesion; air-to-air thermal cycling; alkaline KBH4-water solution; catalytically active matrix; electrical properties; electrical resistance; electroless Cu baths; electroless Cu deposition; electroless copper metallization; electroless plating; electrolessly deposited Cu; electrolessly metallized vias; high density substrates; high-density wiring systems; i-line lithography; mechanical properties; metallization process; negative working photolithography; organic solvent; palladium acetate; photoactivator; precursor layer area dissolution; precursor layer structuring; reduction; reliability; sputter metallization; structured Cu-BCB metallization; thin film multilayer metallization; via metallization; wet development; Additives; Adhesives; Copper; Costs; Dielectrics; Lithography; Mechanical factors; Metallization; Palladium; Polymers;
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 1999. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-56-4
DOI :
10.1109/ISAPM.1999.757312