Nonlinear optical effects in spontaneous and stimulated emission from excited two-band intrinsic semiconductor

The basic results of theoretical nonperturbative analysis of spontaneous and stimulated emission from two-band excited intrinsic semiconductor interacting with a single mode of radiation field in a lossless micro-cavity are presented. The self-consistent dynamics of the coupled system \´\´semiconductor + single mode radiation field", accompanied with spontaneous and stimulated emission was investigated as dependent of the initial level of the excitation of semiconductor in the presence initially of the physical field vacuum. Calculations have been carried out with the help of the commutation version of the evolution method without introducing explicitly the phonon mechanisms. The initial non-equilibrium electron and hole populations in the bands have been supposed to be created by ultra-short laser pulses and described by the Fermi-Dirac quasi-equilibrium distributions with the given chemical potentials. The interaction between the electron-hole subsystem and the mode field has been adopted to be switched on suddenly. The calculations have shown that depending on the initial excitation level of electron-hole subsystem three states of the mode field are realized: the equilibrium Bose-Einstein photon distribution with nonzero chemical potential; the quasi-equilibrium distribution with the average number of photons equal to unit and accompanied with their fluctuations, and finally, the state of photon avalanche. The first regime takes the place when the coefficient of the light amplification is negative. Then, the equilibrium between the electron-hole subsystem and arising photons exists until the average number reaches the unit. For negative and =1 the equilibrium still exists but is accompanied with field fluctuations. Finally, when the steady growth arises the lower but stable values are established