Title :
The effect of annealing temperature on the formation of SrBi2 Ta2O9 (SBT) thin films
Author :
Ravichandran, D. ; Yamakawa, K. ; Roy, R. ; Bhalla, A.S. ; Trolier-McKinstry, S. ; Guo, R. ; Cross, L.E.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
In this paper we report on synthesis of SBT thin-films by sol-gel processing. Sr metal, Bi, 2-ethyl hexanoate and Ta-ethoxide were used as precursors. Thin-films with nominal composition SrBi2Ta2 O9 and SBT +10% excess Bi content were made. Films were annealed at various temperatures to study the microstructure, crystallization temperature and the polarization values. Good crystallization of SBT was obtained by annealing at 700°C-2 hrs, independent of the Bi content in the films. Films annealed in oxygen atmosphere at 800°C-2 hrs did not show any significant change in the polarization value. Crack free films were made with film thicknesses of 0.4 μm. Films annealed at 800°C-2 hrs showed a grain size of ~0.2 μm, and reasonably good polarization values of 5 μC/cm2. In contrast, films prepared with 10% excess Bi showed a very fine grain size <0.1 μm with a lower polarization values of 1.5 μC/cm2
Keywords :
annealing; bismuth compounds; ferroelectric thin films; grain size; sol-gel processing; strontium compounds; 700 to 800 C; SBT; SrBi2Ta2O9; annealing; crystallization; ferroelectric thin film; grain size; microstructure; polarization; sol-gel synthesis; Annealing; Atmosphere; Bismuth; Crystallization; Grain size; Microstructure; Polarization; Strontium; Temperature; Thin films;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598055
