Title :
Low power techniques for digital GaAs VLSI
Author :
López, J.F. ; Sarmento, R. ; Núñez, A. ; Eshraghian, K. ; Lachowicz, S. ; Abbott, D.
Author_Institution :
Dept. Ing. Electron. y Autom., CMA Univ., Las Palmas, Spain
Abstract :
This paper presents a survey of low-power digital Gallium Arsenide logic applicable to high performance VLSI circuits and systems and proposes new design concepts in methodology and architecture based on the implementation of Pseudo-Dynamic Latched Logic in order to achieve reasonable power-delay-area tradeoff. The approach is highly suitable for self-timed systems where the complexities of clock skew are avoided and power saving is achieved through pipelined architectures. The emergence of low-power Complementary HIGFET (C-HICFET) technology enables the realisation of new high performance low-power architectures. The viability of nu-GaAs (νGaAs) as applied to C-HIGFET is discussed and the concept of `soft´ hardware referred as `flexware´ is introduced as a new design paradigm for GaAs
Keywords :
III-V semiconductors; MESFET integrated circuits; VLSI; field effect digital integrated circuits; field effect logic circuits; gallium arsenide; high-speed integrated circuits; integrated circuit design; logic design; low-power electronics; GaAs; design methodology; digital GaAs VLSI; flexware; high performance VLSI circuits; low power techniques; low-power MESFET logic; low-power architectures; low-power complementary HIGFET technology; pipelined architectures; power-delay-area tradeoff; pseudo-dynamic latched logic; self-timed systems; CMOS logic circuits; CMOS technology; Circuits and systems; Design methodology; Gallium arsenide; Logic circuits; Logic design; Roads; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on
Conference_Location :
Ypsilanti, MI
Print_ISBN :
0-7695-0104-4
DOI :
10.1109/GLSV.1999.757443