Title :
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs
Author :
IvanicÌ, Vedran ; Poljak, M. ; Suligoj, Tomislav
Author_Institution :
Dept. of Phys., Univ. of Zagreb, Zagreb, Croatia
Abstract :
Physics-based modeling of hole mobilities in ultra-thin germanium layers is calculated with self-consistent Schödinger-Poisson solver and Kubo-Greenwood formula. Quantum confinement is taken into account for heavy, light and split-off hole band in a double-gate germanium MOS-FET structure. Acoustic and optical phonon scattering is taken into consideration in the calculation of hole momentum relaxation time. The observed reduction of mobility in thinner layers is explained by examining the influence of field-induced and geometry-induced confinement. Contributions from different hole bands are investigated by calculating band population and respective band mobilities.
Keywords :
MOSFET; germanium; hole mobility; phonons; semiconductor device models; Kubo-Greenwood formula; acoustic phonon scattering; band mobility; band population; double-gate germanium MOSFET; field-induced confinement; geometry-induced confinement; heavy hole band; hole momentum relaxation time; light hole band; optical phonon scattering; phonon-limited hole mobility; physics-based modeling; quantum confinement; self-consistent Schodinger-Poisson solver; size 20 nm; split-off hole band; ultrathin-germanium layers; Germanium; MOSFET; Mathematical model; Optical scattering; Phonons; Sociology;
Conference_Titel :
Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on
Conference_Location :
Opatija
Print_ISBN :
978-953-233-081-6
DOI :
10.1109/MIPRO.2014.6859529
