Title :
Photo assisted LPCVD TiN for deep submicron contacts using organo-titanium compound
Author :
Ikeda, K. ; Maeda, Munenori ; Arita, Y.
Abstract :
Work on forming high-quality TiN barrier layers by low-pressure chemical vapor deposition (LPCVD) in deep-submicron contacts is reported. A high-quality titanium nitride film was prepared by the photo-assisted LPCVD method using a new organo-titanium compound, Cp2Ti(N3)2, that does not contain chlorine atoms. The film exhibits sufficient barrier effect to withstand 450°C annealing as well as low resistivity, and adequate step coverage. This fabrication method can be used at lower deposition temperatures
Keywords :
CVD coatings; annealing; metallisation; semiconductor technology; titanium compounds; 450 degC; TiN barrier layers; annealing; barrier effect; deep submicron contacts; deposition temperatures; fabrication method; low-pressure chemical vapor deposition; organic compounds; photo-assisted LPCVD method; resistivity; step coverage;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111008
