Title :
A utility-based integrated process simulation system
Author :
Scheckler, E.W. ; Wong, A.S. ; Wang, R.H. ; Chin, George ; Camagna, J.R. ; Toh, K.K.H. ; Tadros, K.H. ; Ferguson, R.A. ; Neureuther, A.R. ; Dutton, R.W.
Abstract :
The effectiveness of a utility-based process simulation system is demonstrated by investigating several current VLSI technology problems with a variety of powerful simulators. Interactions of deposition, etching and spin-on steps in a planarization process are investigated with topography and creeping flow simulators. Topography and thermal processing simulators are combined to investigate a complete bipolar device process. Simulators for 2-D image calculation and scattering from topography are applied to problems in submicron lithography. The primary platform used for utility-based software integration is SIMPL-DIX which connects layout and process flow data, and an X-window graphical user-interface, into a system for generating device cross-sections. An experimental adaptation of SIMPL into the OCT/VEM/RPC CAD framework has also been developed that provides access to the VEM user-interface, the OCT database, a mask editor, and circuit CAD tools
Keywords :
VLSI; bipolar integrated circuits; circuit CAD; digital simulation; etching; graphical user interfaces; integrated circuit technology; integrated software; lithography; 2D image; OCT database; OCT/VEM/RPC CAD framework; SIMPL-DIX; VEM user-interface; VLSI technology problems; X-window graphical user-interface; bipolar device process; circuit CAD tools; creeping flow simulators; deposition; etching; image calculation; mask editor; planarization process; spin-on steps; submicron lithography; thermal processing simulators; topography; utility-based process simulation system; utility-based software integration;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111026
