DocumentCode :
2708367
Title :
Temperature Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
Author :
Yuan, Xiaobin ; Peng, Zhen ; Hwang, James C M ; Forehand, David ; Goldsmith, Charles L.
Author_Institution :
Lehigh Univ., Bethlehem, PA
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
47
Lastpage :
50
Abstract :
Temperature acceleration of dielectric charging effects in state-of-the-art RF MEMS capacitive switches was characterized and modeled. From the measured charging and discharging transient currents at different temperatures, densities and time constants of traps in the dielectric were extracted. It was found that, while charging and discharging time constants are relatively independent of temperature, steady-state charge densities increase with temperature. A charging model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage under different temperatures. Agreement was obtained between the model prediction and experimental data
Keywords :
dielectric materials; microswitches; RF MEMS capacitive switches; dielectric charging effects; steady-state charge densities; temperature acceleration; Acceleration; Current measurement; Density measurement; Dielectric measurements; Predictive models; Radiofrequency microelectromechanical systems; Steady-state; Switches; Temperature; Time measurement; MEMS; RF; charging; dielectric; switch; temperature acceleration; trap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249923
Filename :
4014814
Link To Document :
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