Title :
Heating of Si wafer using a sub-THz gyrotron FU CW V as a radiation source
Author :
Idehara, Toshitaka ; Urushizaki, Yuichi ; Shimizu, Masahiro
Author_Institution :
Res. Center for Dev. of Far Infrared Region, Univ. of Fukui, Fukui, Japan
Abstract :
Heating effect of sub-THz radiation on Si Wafer is studied by using a Gyrotron FU CW V as a sub-THz radiation source. Increasing rate of the temperature is measured for several frequencies ranged from 75 GHz to around 200 GHz. The highest increasing rate reaches 39 degree/sec at the frequency of 203 GHz at 100W. The skin effect of sub-THz radiation is considered to analyze the measurement results.
Keywords :
elemental semiconductors; heating; silicon; skin effect; terahertz waves; Si; Si wafer heating; frequency 203 GHz; frequency 75 GHz; heating effect; power 100 W; skin effect; subterahertz gyrotron FU CW V; subterahertz radiation source; Frequency measurement; Gyrotrons; Heating; Radiation effects; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612409
