Spin related effect in Terahertz photovoltaic response of Si-MOSFETs

Author

Videlier, H. ; Dyakonova, N. ; Teppe, F. ; Consejo, C. ; Knap, W. ; Lusakowski, J. ; Tomaszewski, D. ; Marczewski, J. ; Grabiec, P.

Author_Institution

GES, Univ. Montpellier 2, Montpellier, France

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bounded to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

Keywords

MOSFET; carrier density; elemental semiconductors; paramagnetic resonance; photovoltaic effects; silicon; terahertz wave detectors; MOSFETs; Si; dc drain-to-source voltage; dopants; paramagnetic resonance; photovoltaic signal generation; spin related effect; spin transitions; terahertz photovoltaic response; two-dimensional carrier density; Logic gates; Magnetic fields; Photovoltaic systems; Plasma temperature; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612411

Filename

5612411